IRF5802 International Rectifier, IRF5802 Datasheet - Page 5

• Manufacturer Part Number: IRF5802
• Description: MOSFET N-CH 150V 900MA 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5802

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 540mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 88pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
1.0
0.8
0.6
0.4
0.2
0.0
D = 0.50
25
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
t , Rectangular Pulse Duration (sec)
125
°
1
0.001
150
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
Notes:
G
10V
V
GS
t
r
V
J
DS
µs
DM
x Z
1
0.1
thJA
IRF5802
P
2
D.U.T.
DM
t
d(off)
+ T
R
A
D
t
1
t
f
t
2
+
-
V
DD
5
1