IRF5802 International Rectifier, IRF5802 Datasheet - Page 6

• Manufacturer Part Number: IRF5802
• Description: MOSFET N-CH 150V 900MA 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5802

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 540mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 88pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF5802
I
A S
12V
Fig 12. Typical On-Resistance Vs. Gate
Fig 15a&b. Unclamped Inductive Test circuit
V
GS
Fig 14a&b. Basic Gate Charge Test Circuit
6
2.80
2.40
2.00
1.60
1.20
0.80
Same Type as D.U.T.
Current Regulator
.2 F
6.0
50K
3mA
t p
Current Sampling Resistors
.3 F
7.0
I
G
V GS, Gate -to -Source Voltage (V)
V
(B R )D S S
D.U.T.
8.0
I
D
and Waveforms
and Waveform
Voltage
+
-
V
9.0 10.0 11.0 12.0 13.0 14.0 15.0
DS
V
R G
GS
20V
V D S
I D = 0.54A
V
t p
G
Q
I A S
GS
D .U .T
0.01
L
Q
Charge
Q
GD
G
1 5 V
DRIVE R
+
-
V D D
A
6.00
4.00
2.00
0.00
Fig 13. Typical On-Resistance Vs. Drain
Fig 15c. Maximum Avalanche Energy
25
20
15
10
0
5
0
25
Starting T , Junction Temperature ( C)
50
Vs. Drain Current
I D , Drain Current (A)
J
2
Current
V GS = 10V
75
100
TOP
BOTTOM
www.irf.com
4
125
0.40A
0.70A
0.90A
°
I D
150
6