IRF5802 International Rectifier, IRF5802 Datasheet - Page 8

MOSFET N-CH 150V 900MA 6TSOP

IRF5802

Manufacturer Part Number
IRF5802
Description
MOSFET N-CH 150V 900MA 6TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF5802

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 540mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
6.8nC @ 10V
Input Capacitance (ciss) @ Vds
88pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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IRF5802
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Notes:
TSOP-6 Tape & Reel Information
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Pulse width
Repetitive rating; pulse width limited by
8
R
max. junction temperature.
Starting T
G
= 25 , I
J
= 25°C, L = 23mH
AS
400µs; duty cycle
= 0.54A.
2%.
This product has been designed and qualified for the industrial market.
C
When mounted on 1 inch square copper board
I
as C
T
SD
oss
J
150°C
eff. is a fixed capacitance that gives the same charging time
oss
Data and specifications subject to change without notice.
0.54A, di/dt
Visit us at www.irf.com for sales contact information.1/00
Qualification Standards can be found on IR’s Web site.
while V
DS
is rising from 0 to 80% V
89A/µs, V
DD
V
(BR)DSS
TAC Fax: (310) 252-7903
,
DSS
www.irf.com

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