IRF7420 International Rectifier, IRF7420 Datasheet

MOSFET P-CH 12V 11.5A 8-SOIC

IRF7420

Manufacturer Part Number
IRF7420
Description
MOSFET P-CH 12V 11.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7420

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 4.5V
Input Capacitance (ciss) @ Vds
3529pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7420

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7420
Manufacturer:
mot
Quantity:
20
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Manufacturer:
IR
Quantity:
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Part Number:
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Company:
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l
l
l
l
Thermal Resistance
These P-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
DS
D
D
GS
J,
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
T
@T
@T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
®
Power MOSFETs from
Parameter
Parameter
ƒ
ƒ
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
V
-12V
DSS
1
2
3
4
Top View
17.5mΩ@V
HEXFET Power MOSFET
14mΩ@V
26mΩ@V
8
6
5
7
-55 to +150
R
Max.
Max.
-11.5
DS(on)
-9.2
50
D
D
D
D
-12
-46
2.5
1.6
A
20
±8
GS
GS
GS
IRF7420
max
= -4.5V
= -1.8V
= -2.5V
SO-8
-
11.5A
-
-
9.8A
8.1A
mW/°C
Units
Units
I
°C/W
D
°C
V
A
V
1
8/2/06

Related parts for IRF7420

IRF7420 Summary of contents

Page 1

... V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com V DSS -12V Top View @ -4. -4.5V GS ƒ ƒ ƒ IRF7420 HEXFET Power MOSFET R max I DS(on) D 14mΩ@V = -4.5V 11. 17.5mΩ@V = -2.5V 9. 26mΩ@V = -1.8V 8. SO-8 Max. Units ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 10 ° 150 ...

Page 4

0V MHZ 5000 C iss = SHORTED 4500 C rss = oss = 4000 Ciss 3500 3000 ...

Page 5

T , Case Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 ...

Page 6

-11.5A 0.010 0.005 0.0 2.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 400 350 300 250 -250µA 200 150 ...

Page 8

SO-8 Package Details 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME ...

Page 9

Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : ...

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