IRF7422D2 International Rectifier, IRF7422D2 Datasheet

MOSFET P-CH 20V 4.3A 8-SOIC

IRF7422D2

Manufacturer Part Number
IRF7422D2
Description
MOSFET P-CH 20V 4.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7422D2

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
90 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
610pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7422D2

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Manufacturer
Quantity
Price
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Description
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance Ratings
Notes:

ƒ
The FETKY
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
www.irf.com
Parameter
R
I
I
I
P
P
V
dv/dt
T
D
D
DM
θJA
Pulse width ≤ 300µs – duty cycle ≤ 2%
Low V
D
D
GS
J,
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Generation 5 Technology
SO-8 Footprint
@ T
@ T
SD
T
@T
@T
STG
≤ -2.2A, di/dt ≤ -50A/µs, V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
F
TM
Schottky Rectifier
family of Co-packaged HEXFETs and
Parameter
Continuous Drain Current, V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Junction-to-Ambient
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
Ã
GS
G
A
A
S
@ -4.5V
FETKY
1
2
3
4
Top View
TM
MOSFET & Schottky Diode
8
7
6
5
-55 to +150
Maximum
IRF7422D2
D
D
D
Maximum
D
A
SO-8
± 12
A
-4.3
-3.4
-5.0
-33
2.0
1.3
16
62.5
Schottky Vf = 0.52V
R
DS(on)
V
DSS
= -20V
PD- 91412M
= 0.09Ω
Units
mW/°C
°C/W
Units
V/ns
10/18/04
°C
W
A
V
1

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IRF7422D2 Summary of contents

Page 1

... Pulse width ≤ 300µs – duty cycle ≤ 2% „ Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com FETKY Top View @ -4.5V GS Ã ≤ 150° (BR)DSS J PD- 91412M IRF7422D2 MOSFET & Schottky Diode -20V DSS 0.09Ω 6 DS(on Schottky Vf = 0.52V SO-8 Maximum Units -4.3 -3 ...

Page 2

... IRF7422D2 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge gd t Turn-On Delay Time d(on) t Rise Time ...

Page 3

... A 0.1 10 100 0.01 Fig 2. Typical Output Characteristics 2 1 150°C J 1.0 0.5 = -15V 0.0 A -60 -40 4.0 4.5 5.0 Fig 4. Normalized On-Resistance IRF7422D2 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V -1.5V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( -3. -4.5V GS -20 ...

Page 4

... IRF7422D2 1500 1MHz iss rss oss iss 1000 C oss C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150° 25° 0.1 0.3 0.6 0 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics -2. SHORTED V ds ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.4 0.3 0 -2. -5. Drain Current (A) D www.irf.com Power Mosfet Characteristics 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 0.14 0.12 0.10 0.08 0.06 0. IRF7422D2 Notes: 1. Duty factor Peak thJA -4. Gate-to-Source Voltage (V) GS 100 ...

Page 6

... IRF7422D2 Schottky Diode Characteristics 100 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Fig Typical Forward Voltage Drop Characteristics 6 100 10 1 0.1 0.01 0.001 T = 150° 125° 25°C J 1000 0.8 1.0 (V) FM 100 0 Capacitance Vs. Reverse Voltage T = 150°C J 125°C 100° ...

Page 7

... SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) INT ERNAT IONAL www.irf.com B H 0.25 [.010 0.10 [.004 6.46 [.255] 3X 1.27 [.050] 807D1 RECT IFIER LOGO IRF7422D2 INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b ...

Page 8

... IRF7422D2 SO-8 (Fetky) Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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