IRF3709 International Rectifier, IRF3709 Datasheet - Page 2

• Manufacturer Part Number: IRF3709
• Description: MOSFET N-CH 30V 90A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 2672pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3709

IRF3709/3709S/3709L
Diode Characteristics
Avalanche Characteristics
Dynamic @ T
Static @ T
Symbol
E
I
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
V
V
R
V
Symbol
I
I
t
Q
t
Q
I
AR
I
d(on)
r
d(off)
f
SM
S
rr
rr
DSS
2
V
GSS
fs
AS
(BR)DSS
GS(th)
iss
oss
rss
SD
DS(on)
g
gs
gd
oss
rr
rr
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
53
–––
–––
––– 0.88
––– 0.82 –––
–––
–––
–––
–––
30
0.029
2672 –––
1064 –––
–––
171
109
–––
–––
–––
–––
–––
––– -200
–––
–––
6.7
9.7
9.2
6.4
7.4
27
22
11
21
48
46
48
52
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
200
90
360
–––
10.5
3.0
1.3
41
72
69
72
78
9.0
20
†
V/°C
m
nC
ns
pF
nC
nC
µA
nA
ns
ns
S
A
V
V
Typ.
V
–––
–––
I
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
V
V
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
D
integral reverse
Reference to 25°C, I
D
DS
DS
GS
GS
DD
GS
GS
DS
J
J
J
J
GS
GS
GS
DS
DS
DS
GS
GS
G
= 15A
= 30A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= 15V, I
= 16V
= 16V
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 5.0V ƒ
= 0V, V
= 15V
= 4.5V ƒ
= 0V
= 0V, I
= 16V
= -16V
GS
, I
D
S
F
DS
D
D
D
Conditions
D
S
F
= 250µA
GS
GS
Conditions
Conditions
= 30A, V
= 30A, V
= 30A
= 15A
= 250µA
= 30A, V
= 12A
= 10V
= 30A, V
Max.
382
= 0V
= 0V, T
30
www.irf.com
D
GS
R
ƒ
= 1mA
ƒ
GS
=15V
R
J
=15V
= 125°C
= 0V
G
= 0V ƒ
Units
mJ
A
ƒ
S
D