IRF3709 International Rectifier, IRF3709 Datasheet - Page 4

• Manufacturer Part Number: IRF3709
• Description: MOSFET N-CH 30V 90A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 2672pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3709

IRF3709/3709S/3709L
4
1000
100
0.1
10
4000
3000
2000
1000
1
0.2
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
T = 150 C
J
1
Drain-to-Source Voltage
V
SD
V
°
DS
0.8
,Source-to-Drain Voltage (V)
Forward Voltage

T = 25 C
V
C
C
C
, Drain-to-Source Voltage (V)
J
GS
iss
rss
oss
=
=
=
=
0V,
C
C
C
°
gs
gd
ds
1.4
+ C
+ C
10
C oss
C rss
f = 1MHz
gd ,
gd
C iss
C
ds
2.0
V
GS
SHORTED
= 0 V
2.6
100
10000
1000
Fig 8. Maximum Safe Operating Area
100
6
5
4
3
2
1
0
10
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
Single Pulse
T
T
C
J
30A
= 25 C °
= 150 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
5
V
Q , Total Gate Charge (nC)
DS
G
°
, Drain-to-Source Voltage (V)
10
BY R
15
10
DS(on)
V
V
V
DS
DS
DS
www.irf.com
= 24V
= 15V
= 6V
20
10us
100us
1ms
10ms
25
30
100