IRF3709 International Rectifier, IRF3709 Datasheet - Page 6

• Manufacturer Part Number: IRF3709
• Description: MOSFET N-CH 30V 90A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 2672pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3709

IRF3709/3709S/3709L
Fig 13a. Basic Gate Charge Waveform
Fig 12a. Unclamped Inductive Test Circuit
V
6
Fig 12b. Unclamped Inductive Waveforms
GS
V
I
G
A S
Q
GS
R G
2 0 V
V D S
t p
Charge
Q
Q
GD
G
t p
I A S
D .U .T
0.0 1
L
V
(B R )D SS
15 V
D R IV E R
+
-
V D D
A
1200
1000
800
600
400
200
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature( C)
12V
V
GS
50
Same Type as D.U.T.
Current Regulator
.2 F
Vs. Drain Current
J
75
50K
3mA
Current Sampling Resistors
.3 F
I
G
100

TOP
BOTTOM
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D.U.T.
I
D
125
+
-
I D
13A
19A
30A
V
°
DS
150