IRF7705TR International Rectifier, IRF7705TR Datasheet
IRF7705TR
Specifications of IRF7705TR
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IRF7705TR Summary of contents
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... Available in Tape & Reel l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for use in battery and load management ...
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IRF7705 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150 C ° ° ...
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IRF7705 4000 1MHz iss rss 3200 oss iss 2400 1600 800 ...
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T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0. SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 ...
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IRF7705 0.08 0.07 0.06 0.05 0. -8.0A 0.03 0.02 0.01 2.0 3.0 4.0 5.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage ...
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TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) TSSOP-8 Tape and Reel ...
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IRF7705 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards ...