IRF4104L International Rectifier, IRF4104L Datasheet - Page 4

• Manufacturer Part Number: IRF4104L
• Description: MOSFET N-CH 40V 75A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF4104L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF4104L

4
1000.0
100.0
5000
4000
3000
2000
1000
10.0
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
Coss
Crss
Ciss
T J = 25°C
1.0
f = 1 MHZ
10
1.4
V GS = 0V
1.8
100
10000
1000
100
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 75A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 32V
VDS= 20V
40
10
60
www.irf.com
100µsec
10msec
1msec
100
80
1000
100