IRF4104L International Rectifier, IRF4104L Datasheet - Page 8

• Manufacturer Part Number: IRF4104L
• Description: MOSFET N-CH 40V 75A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF4104L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF4104L

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8
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+
-
D.U.T
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Fig 17.
+
-
•
•
•
•
SD
•
•
•
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
-
„
G
HEXFET
t
d(on)
+
t
r
®
≤ 0.1 %
≤ 1
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V