IRF4104L International Rectifier, IRF4104L Datasheet - Page 5

• Manufacturer Part Number: IRF4104L
• Description: MOSFET N-CH 40V 75A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF4104L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF4104L

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0.001
120
100
0.01
0.1
80
60
40
20
10
Fig 9. Maximum Drain Current Vs.
0
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.10
0.05
0.02
50
Case Temperature
0.01
T C , Case Temperature (°C)
75
LIMITED BY PACKAGE
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
2.0
1.5
1.0
0.5
1
Ci= τi/Ri
τ
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
i/Ri
R
0.001
I D = 75A
V GS = 10V
1
R
1
τ
2
T J , Junction Temperature (°C)
R
τ
2
Vs. Temperature
2
R
2
20 40 60 80 100 120 140 160 180
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
τ
3
3
τ
C
τ
Ri (°C/W)
0.01
0.371
0.337
0.337
0.000272
0.001375
0.018713
τi (sec)
5
0.1