2SK3569 Toshiba, 2SK3569 Datasheet - Page 5

• Manufacturer Part Number: 2SK3569
• Description: MOSFET N-CH 600V 10A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3569

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220 (SIS)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.01
100
0.1
10
1
1
CURVES
LINEARLY WITH INCREASE
TEMPERATURE.
I D max (CONTINUOUS)
DC OPERATION
*
DRAIN-SOURCE VOLTAGE V
I D max (PULSED) *
SINGLE NONREPETITIVE PULSE
Tc = 25°C
MUST
SAFE OPERATING AREA
0.001
0.01
0.1
10
Tc=25℃
10μ
1
10
BE
0.05
0.02
0.2
0.1
DERATED
Duty=0.5
Duty=0.5
0.01
IN
100μ
1 ms *
100
V DSS max
SINGLE PULSE
100 μs *
DS
(V)
1ｍ
1000
PULSE WIDTH t
r
th
10ｍ
– t
5
w
R
V
DD
G
w
= 25 Ω
= 90 V, L = 6.36mH
500
400
300
200
100
(s)
−15 V
0
100ｍ
15 V
25
TEST CIRCUIT
CHANNEL TEMPERATURE (INITIAL)
P DM
50
Duty = t/T
R th (ch-c) = 2.78°C/W
1
t
T
75
E
T
AS
ch
Ε AS
– T
V
(°C)
DD
=
ch
100
WAVEFORM
B
10
1
2
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
2010-01-29
DS
2SK3569
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠