HAT2200R Renesas Electronics America, HAT2200R Datasheet
HAT2200R
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HAT2200R Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... HAT2200R Silicon N Channel Power MOS FET Power Switching Features Capable gate drive Low drive current High density mounting Low on-resistance typ. ( DS(on) GS Outline Rev.2.00, Apr.05.2004, page SOP Drain REJ03G0232-0200Z Rev.2.00 Apr.05.2004 Source Gate ...
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... HAT2200R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature Notes duty cycle 1% 2. Value at Tch = 25° ...
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... HAT2200R Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 250 200 150 100 Gate to Source Voltage Rev ...
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... HAT2200R Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test - Case Temperature Body–Drain Diode Reverse Recovery Time 100 50 20 di/dt = 100 A/µ 0.1 1 Reverse Drain Current Dynamic Input Characteristics 250 200 V = 100 V DS 150 V DS 100 Gate Charge Rev.2.00, Apr.05.2004, page ...
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... HAT2200R Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ Rev.2.00, Apr.05.2004, page Maximum Avalanche Energy vs. Channel Temperature Derating – Pulse Test 0 1.2 1.6 2.0 ...
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... HAT2200R Avalanche Test Circuit V DS Monitor Rg Vin 50Ω Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.2.00, Apr.05.2004, page Avalanche Waveform Monitor Switching Time Waveform Vout Monitor Vin R L Vout td(on) V DSS 1 • • DSS DD V (BR)DSS 90% 10% 10% 10% 90% ...
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... Base material dimension Ordering Information Part Name Quantity HAT2200R-EL-E 2500pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Apr.05.2004, page 4.90 ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...