HAT2200R Renesas Electronics America, HAT2200R Datasheet - Page 4

• Manufacturer Part Number: HAT2200R
• Description: MOSFET N-CH 100V 8A 8-SOP
• Manufacturer: Renesas Electronics America

Specifications of HAT2200R

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

HAT2200R
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Ambient Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time t
Notes: 4. Pulse test
Rev.2.00, Apr.05.2004, page 2 of 7
2. Value at Tch = 25°C, Rg
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s, duty cycle
1%
50
Symbol
V
I
I
V
R
R
|y
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
t
t
t
V
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(off)
DF
DS(on)
DS(on)
fs
|
Symbol
V
V
I
I
I
I
E
Pch
Tch
Tstg
D
D(pulse)
DR
AP
ch-a
DSS
GSS
AR
Note 2
Note 2
Note3
Note3
Min
100
—
—
3.5
—
—
8
—
—
—
—
—
—
—
—
—
—
—
—
—
Note1
Typ
—
—
—
—
22
23
14
2300
280
90
1.3
32
12
8
16
4
32
4.5
0.79
45
Ratings
100
±20
8
64
8
8
6.4
2.5
50
150
–55 to +150
Max
—
± 0.1
1
5.0
28
33
—
—
—
—
—
—
—
—
—
—
—
—
1.03
—
10s
Unit
V
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
R
Rg = 4.7
IF = 8 A, V
IF = 8 A, V
diF/ dt = 100 A/ µs
D
D
D
D
D
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
= 10 mA, V
= 4 A, V
= 4 A, V
= 4 A, V
= 8 A
= 7.5
Unit
V
V
A
A
A
A
mJ
W
°C/W
= ±20 V, V
= 100 V, V
= 10 V, I
= 10 V
= 0
= 50 V
= 10 V
= 10 V, I
C
C
30 V
GS
GS
DS
GS
GS
D
= 10 V
= 8 V
= 10 V
= 0
= 0
GS
D
= 4 A
GS
DS
= 1 mA
= 0
(Ta = 25°C)
(Ta = 25°C)
Note4
= 0
= 0
Note4
Note4
Note4