MTP23P06V ON Semiconductor, MTP23P06V Datasheet

MOSFET P-CH 60V 23A TO-220AB

MTP23P06V

Manufacturer Part Number
MTP23P06V
Description
MOSFET P-CH 60V 23A TO-220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MTP23P06V

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1620pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Forward Transconductance Gfs (max / Min)
11.5 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
23 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTP23P06VOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTP23P06V
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MTP23P06VG
Manufacturer:
ON
Quantity:
13 600
MTP23P06V
Power MOSFET
23 Amps, 60 Volts
P−Channel TO−220
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
Drain Current − Continuous @ 25°C
Drain Current
Drain Current
Total Power Dissipation @ 25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance − Junction−to−Case
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 seconds
L
This Power MOSFET is designed to withstand high energy in the
Avalanche Energy Specified
I
Pb−Free Package is Available*
DD
= 23 Apk, L = 3.0 mH, R
DSS
= 25 Vdc, V
and V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
GS
Rating
p
J
≤ 10 ms)
= 10 Vdc, Peak
− Junction−to−Ambient
= 25°C
Specified at Elevated Temperature
(T
GS
G
C
= 25 W)
= 25°C unless otherwise noted)
= 1.0 MW)
Preferred Device
p
≤ 10 ms)
Symbol
T
V
V
V
R
R
J
V
E
I
DGR
GSM
P
, T
DSS
DM
T
I
I
qJC
qJA
GS
AS
D
D
D
L
stg
−55 to 175
Value
± 15
± 25
0.60
1.67
62.5
794
260
60
60
23
15
81
90
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
MTP23P06V
MTP23P06VG
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
23 AMPERES, 60 VOLTS
MTP23P06V = Device Code
A
Y
WW
G
ORDERING INFORMATION
4
G
R
DS(on)
http://onsemi.com
CASE 221A
TO−220AB
STYLE 5
TO−220AB
TO−220AB
(Pb−Free)
P−Channel
Package
= Location Code
= Year
= Work Week
= Pb−Free Package
D
AND PIN ASSIGNMENT
= 120 mW
MARKING DIAGRAM
Publication Order Number:
Gate
S
1
23P06VG
AYWW
Drain
Drain
MTP
50 Units/Rail
50 Units/Rail
4
2
MTP23P06V/D
Shipping
3
Source

Related parts for MTP23P06V

MTP23P06V Summary of contents

Page 1

... MARKING DIAGRAM AND PIN ASSIGNMENT 4 4 Drain TO−220AB MTP CASE 221A 23P06VG STYLE 5 AYWW Gate Source 2 Drain MTP23P06V = Device Code A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping TO−220AB 50 Units/Rail TO−220AB 50 Units/Rail (Pb−Free) Publication Order Number: MTP23P06V/D ...

Page 2

... Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. MTP23P06V (T = 25°C unless otherwise noted Vdc) ...

Page 3

... D Figure 3. On−Resistance versus Drain Current and Temperature 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −50 − 100 T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature MTP23P06V 40 ≥ GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics 0. 25°C J 0.115 0.11 ...

Page 4

... GG GSP 4000 3000 2000 1000 0 MTP23P06V POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring ...

Page 5

... DM DSS ) do not exceed 10 ms. In addition the total transition time ( power averaged over a complete switching cycle must not exceed (T − T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For MTP23P06V 30 1000 T = 25° ...

Page 6

... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1. 0.5 0.2 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E−05 1.0E−04 Figure 14. Diode Reverse Recovery Waveform MTP23P06V SAFE OPERATING AREA 800 700 600 500 400 dc 300 200 100 100 T J Figure 12 ...

Page 7

... V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTP23P06V/D ...

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