MTP23P06V ON Semiconductor, MTP23P06V Datasheet - Page 2

• Manufacturer Part Number: MTP23P06V
• Description: MOSFET P-CH 60V 23A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MTP23P06V

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms
• Forward Transconductance Gfs (max / Min): 11.5 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 23 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTP23P06VOS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
SWITCHING CHARACTERISTICS (Note 2)
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
Drain−Source Breakdown Voltage
(V
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
(V
Gate−Body Leakage Current (V
Gate Threshold Voltage
(V
Threshold Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (V
Drain−Source On−Voltage
(V
(V
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge (See Figure 8)
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(V
GS
DS
DS
DS
GS
GS
DS
= 60 Vdc, V
= 60 Vdc, V
= V
= 0 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10.9 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
= 0.25 mAdc)
GS
GS
= 23 Adc)
= 11.5 Adc, T
D
= 0 Vdc)
= 0 Vdc, T
= 11.5 Adc)
J
GS
J
= 150°C)
= 150°C)
= ± 15 Vdc, V
Characteristic
GS
(V
(V
(I
(T
DS
= 10 Vdc, I
DS
S
J
= 23 Adc, V
= 48 Vdc, I
= 25°C unless otherwise noted)
= 25 Vdc, V
(V
(I
V
(I
DS
S
GS
S
DD
= 23 Adc, V
= 23 Adc, V
= 0 Vdc)
dI
= 10 Vdc, R
= 30 Vdc, I
D
S
= 11.5 Adc)
/dt = 100 A/ms)
D
GS
GS
http://onsemi.com
= 23 Adc, V
= 0 Vdc, T
MTP23P06V
= 0 Vdc, f = 1.0 MHz)
GS
GS
D
G
= 23 Adc,
= 0 Vdc,
= 0 Vdc)
= 9.1 W)
2
GS
J
= 150°C)
= 10 Vdc)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
GS(th)
DS(on)
C
C
V
g
d(on)
d(off)
GSS
DSS
Q
Q
Q
Q
L
L
t
t
t
oss
t
FS
t
SD
RR
iss
rss
rr
a
b
r
f
D
S
T
1
2
3
Min
2.0
5.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.093
142.2
100.5
0.804
1160
60.5
11.5
13.8
98.3
41.7
Typ
380
105
2.8
5.3
7.0
2.2
1.8
3.5
4.5
7.5
41
62
38
18
14
−
−
−
−
−
−
1620
Max
0.12
100
100
530
210
200
120
4.0
3.3
3.2
3.5
10
30
80
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
nH
nH
pF
ns
ns
W