MTP23P06V ON Semiconductor, MTP23P06V Datasheet - Page 5

• Manufacturer Part Number: MTP23P06V
• Description: MOSFET P-CH 60V 23A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MTP23P06V

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms
• Forward Transconductance Gfs (max / Min): 11.5 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 23 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTP23P06VOS

the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
Resistance−General Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
10
9
8
7
6
5
4
3
2
1
0
) nor rated voltage (V
Figure 8. Gate−To−Source and Drain−To−Source
0
J(MAX)
Q1
5
Q3
in
r
Voltage versus Total Charge
,t
− T
10
f
) do not exceed 10 ms. In addition the total
Q
C
g
, TOTAL GATE CHARGE (nC)
AN569,
)/(R
15
Q2
qJC
).
QT
DSS
20
V
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
) is exceeded and the
DS
“Transient
25
20
15
10
5
25
0
Figure 10. Diode Forward Voltage versus Current
0
0.25
T
V
30
J
GS
V
= 25°C
GS
= 0 V
SAFE OPERATING AREA
T
I
V
C
D
J
0.5
SD
) of 25°C.
= 23 A
= 25°C
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
35
Thermal
http://onsemi.com
0.75
MTP23P06V
40
30
27
24
21
18
15
12
9
6
3
0
1
5
1.25
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
assumed to equal the values indicated.
1000
Although many E−FETs can withstand the stress of
100
10
1.5
1
1
T
I
V
V
D
J
DD
GS
1.75
= 23 A
= 25°C
DM
= 30 V
= 10 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
), the energy rating is specified at rated
2
t
d(off)
t
d(on)
R
2.25
G
t
t
f
r
, GATE RESISTANCE (OHMS)
D
), in accordance with industry
2.5
10
D
can safely be
100