NTD3055-094G ON Semiconductor, NTD3055-094G Datasheet

MOSFET N-CH 60V 12A DPAK

NTD3055-094G

Manufacturer Part Number
NTD3055-094G
Description
MOSFET N-CH 60V 12A DPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD3055-094G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
94 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.094 Ohms
Forward Transconductance Gfs (max / Min)
6.7 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD3055-094G
NTD3055-094GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD3055-094G
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Part Number:
NTD3055-094G
Manufacturer:
ON
Quantity:
12 500
NTD3055-094
Power MOSFET
12 A, 60 V, N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
1. When surface mounted to an FR4 board using 0.5 sq in. pad size.
2. When surface mounted to an FR4 board using the minimum recommended
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 7
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses above
the Recommended Operating Conditions may affect device reliability.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Designed for low voltage, high speed switching applications in
Bridge Circuits
Lower R
Lower V
Lower and Tighter V
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
pad size.
Derate above 25°C
Energy − Starting T
(V
I
L(pk)
DD
− Continuous
− Non−Repetitive (t
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 11 A, V
= 25 Vdc, V
DS(on)
DS(on)
DS
Rating
GS
= 60 Vdc)
J
p
= 10 Vdc, L = 1.0 mH
(T
= 25°C
v10 ms)
A
A
SD
p
J
GS
v10 ms)
= 25°C
= 100°C
= 25°C unless otherwise noted)
A
A
A
= 10 MW)
= 25°C (Note 1)
= 25°C (Note 2)
= 25°C
Symbol
T
V
V
R
R
R
V
V
J
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
GS
D
D
AS
D
L
stg
−55 to
Value
+175
"20
"30
0.32
3.13
71.4
100
260
2.1
1.5
60
60
12
10
45
48
61
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W
W
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
1 2
1
V
2
(BR)DSS
60 V
3
3
ORDERING INFORMATION
55094
Y
WW
G
4
4
http://onsemi.com
G
CASE 369D
CASE 369C
STYLE 2
R
= Device Code
= Year
= Work Week
= Pb−Free Package
DPAK−3
STYLE 2
DS(on)
DPAK
94 mW
N−Channel
Publication Order Number:
D
TYP
S
Gate
Gate
DIAGRAMS
MARKING
NTD3055−094/D
1
1
Drain
Drain
Drain
Drain
4
2
4
2
I
D
12 A
MAX
3
Source
3
Source

Related parts for NTD3055-094G

NTD3055-094G Summary of contents

Page 1

... R TYP I MAX DS(on N−Channel MARKING DIAGRAMS 4 Drain 4 DPAK CASE 369C STYLE Drain Gate Source 4 Drain 4 DPAK−3 CASE 369D STYLE Gate Drain Source 55094 = Device Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD3055−094/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.20 0. 0.16 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE T = 25° 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased ...

Page 7

... ORDERING INFORMATION Device NTD3055−094 NTD3055−094G NTD3055−094−1 NTD3055−094−1G NTD3055−094T4 NTD3055−094T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package DPAK DPAK (Pb− ...

Page 8

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE C SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2 ...

Page 9

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD3055−094/D ...

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