BAP50-03,115 NXP Semiconductors, BAP50-03,115 Datasheet - Page 3

• Manufacturer Part Number: BAP50-03,115
• Description: DIODE PIN GP 50V 50MA SOD-323
• Manufacturer: NXP Semiconductors

Specifications of BAP50-03,115

• Package / Case: SC-76, SOD-323, UMD2
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
• Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.35 pF at 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 5 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1916-2; 934055520115; BAP50-03 T/R

NXP Semiconductors
BAP50-03_4
Product data sheet
Fig 1.
Fig 3.
(fF)
(dB)
C
L
ins
(1) I
(2) I
(3) I
d
500
400
300
200
100
0
0
1
2
3
4
5
0.5
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
T
Diode inserted in series with a 50
biased via the analyzer Tee network.
Insertion loss of the diode as a function of
frequency; typical values
F
F
F
amb
= 10 mA
= 1 mA
= 0.5 mA
= 25 C.
4
1
j
= 25 C.
1.5
8
12
2
(1)
(2)
(3)
2.5
16
stripline circuit and
V
f (GHz)
mgs323
R
mgs319
(V)
Rev. 04 — 11 September 2009
20
3
Fig 2.
Fig 4.
(dB)
ISL
( )
r
10
10
D
10
15
20
25
10
10
0
5
1
3
2
0.5
f = 100 MHz; T
Diode forward resistance as a function of
forward current; typical values
T
Diode zero biased and inserted in series with a 50
stripline circuit.
Isolation of the diode as a function of
frequency; typical values
2
amb
= 25 C.
1
10
j
= 25 C.
1
1.5
General purpose PIN diode
2
1
BAP50-03
I
© NXP B.V. 2009. All rights reserved.
2.5
F
(mA)
f (GHz)
mgs316
mgs317
10
3
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