BAP50 Changjiang Electronics Technology, BAP50 Datasheet
BAP50
Manufacturer Part Number
BAP50
Description
pin Diodes
Manufacturer
Changjiang Electronics Technology
Datasheet
1.BAP50.pdf
(3 pages)
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DESCRIPTION
Silicon planar
FEATURES
APPLICATION
General RF applications.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: W4
Maximum Ratings and Electrical Characteristics, Single Diode @T
Continuous reverse voltage
Continuous Forward Current
Power Dissipation (T
thermal resistance from junction to soldering point
Junction temperature
Storage temperature range
FBAP50-05W
1
W4
3
Two elements in common cathode configuration
Low diode capacitance
Low diode forward resistance..
in a small-sized package
2
A
=90℃)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03Z Plastic-Encapsulate Diodes
pin Diodes
Parameter
Symbol
Rthj-s
T
Pd
V
T
STG
I
A
F
R
j
=25℃
WBFBP-03Z
(2×2×0.5)
unit: mm
3
-65~+150
-65~+150
Limits
150
250
50
50
2
1
Unit
K/W
mW
mA
℃
℃
V
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BAP50 Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03Z Plastic-Encapsulate Diodes FBAP50-05W pin Diodes DESCRIPTION Silicon planar FEATURES Two elements in common cathode configuration in a small-sized package Low diode capacitance Low diode forward resistance.. APPLICATION General RF applications. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) ...
Page 2
... Conditions V I =10µ =50mA F 100 nA V =50V R 1 =0V,f=1MHz R 0 =1V,f=1MHz R 0 =5V,f=1MHz R 40 Ω I =0.5mA , f=100MHz F 25 Ω I =1mA , f=100MHz F 5 Ω I =10mA , f=100MHz F When switched from =6mA; R =100;measured μ =3mA R nH IF=100mA; f=100MHz FBAP50-05W =10mA F ...
Page 3
Dimensions In Millimeters Symbol Min. A 0.450 A1 0.000 b 0.150 D 1.900 E 1.900 D1 1.100 REF. E1 0.600 REF. e 1.300 TYP. L 0.500 REF. k 0.400 REF. z 0.500 REF. Dimensions In Inches Max. Min. 0.550 0.018 ...