MMBTA42E Jiangsu Changjiang Electronics Technology Co., Ltd., MMBTA42E Datasheet
MMBTA42E
Manufacturer Part Number
MMBTA42E
Description
TRANSISTOR
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.MMBTA42E.pdf
(4 pages)
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Power dissipation P
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1D
MAXIMUM RATINGS T
V
V
V
I
T
T
R
R
C
J
stg
CBO
CEO
EBO
ӨJA
ӨJC
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
MMBTA42E
B E
Symbol
1D
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
CM
: 0.15 W (Tamb=25 ℃ )
A
=25 ℃ unless otherwise noted
WBFBP-03A Plastic-Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TRANSISTOR
Parameter
Symbol
V
V
V
V
V
h
h
h
CE
BE
(BR)CBO
(BR)CEO
(BR)EBO
I
I
I
unless otherwise specified)
CBO
EBO
FE(1)
FE(2)
FE(3)
CEO
f
(sat)
(sat)
T
I
I
I
V
V
V
V
V
V
V
I
I
V
f=
C
C
E
C
C
CB
CE
CE
EB
CE
CE
CE
CE
= 100
= 1mA, I
= 100
=20mA, I
= 20mA, I
Test
30MHz
= 5V, I
=200V, I
=200V, I
=300V, I
=10V, I
=10V, I
=10V, I
=20V, I
µ
µ
A, I
A, I
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
C
conditions
B
C
C
C
C
B
=0
=0
B
=1mA
=10mA
=30mA
= 10mA
= 2mA
E
B
B
E
C
=2mA
=0
=0
=0
=0
=0
-55-150
Value
83.3
310
305
300
150
200
5
BACK
TOP
MIN
310
305
100
60
75
50
5
E
B
MAX
0.25
0.25
200
C
C
0.1
0.2
0.9
5
Units
℃/W
℃/W
mA
B
E
℃
℃
V
V
V
UNIT
MHz
µ
µ
µ
µ
V
V
V
V
V
A
A
A
A
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MMBTA42E Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors MMBTA42E TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor FEATURES : 0.15 W (Tamb=25 ℃ ) Power dissipation P CM APPLICATION High Voltage Amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: =25 ℃ unless otherwise noted ...
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... MMBTA42E ...
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