MMBTA92E Jiangsu Changjiang Electronics Technology Co., Ltd., MMBTA92E Datasheet
MMBTA92E
Manufacturer Part Number
MMBTA92E
Description
TRANSISTOR
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.MMBTA92E.pdf
(3 pages)
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Power dissipation P
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:2D
MAXIMUM RATINGS T
V
V
V
I
T
T
R
R
C
J
stg
CBO
CEO
EBO
ӨJA
ӨJC
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
MMBTA92E
B E
Symbol
2D
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
CM
WBFBP-03A Plastic-Encapsulate Transistors
: 0.15 W (Tamb=25 ℃ )
A
=25 ℃ unless otherwise noted
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TRANSISTOR
Parameter
Symbol
V
V
V
V
V
h
h
h
CE
BE
(BR)CBO
(BR)CEO
(BR)EBO
I
I
I
CBO
EBO
FE(1)
FE(2)
FE(3)
CEO
f
(sat)
(sat)
T
I
I
I
V
V
V
V
V
V
V
I
I
V
f=
C
C
E
C
C
CB
CE
CE
EB
CE
CE
CE
CE
= -100
= -1mA, I
= -100
=-20 mA, I
= -20 mA, I
unless otherwise specified)
30MHz
= -5V, I
=-200V, I
=-200V, I
=-300V, I
= -10V, I
= -10V, I
= -10V, I
=-20V, I
Test
µ
µ
A, I
A, I
C
B
C
=0
=0
C
C
C
conditions
B
= -10mA
E
B
B
B
E
C
= -1mA
=-10mA
=-30mA
= -2mA
=0
=0
=0
= -2mA
=0
=0
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
-55-150
Value
-310
-305
-300
83.3
150
200
-5
-310
-305
MIN
100
60
60
50
-5
BACK
TOP
MAX
-0.25
-0.25
-0.1
-0.2
-0.9
200
E
B
-5
C
C
Units
℃/W
℃/W
mA
B
E
℃
℃
V
V
V
UNIT
MHz
µ
µ
µ
µ
V
V
V
V
V
A
A
A
A
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MMBTA92E Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors MMBTA92E TRANSISTOR DESCRIPTION PNP Epitaxial Silicon Transistor FEATURES : 0.15 W (Tamb=25 ℃ ) Power dissipation P CM APPLICATION High Voltage Amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: =25 ℃ unless otherwise noted ...
Page 2
... MMBTA92E ...
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