MMBT2222AE Jiangsu Changjiang Electronics Technology Co., Ltd., MMBT2222AE Datasheet
MMBT2222AE
Manufacturer Part Number
MMBT2222AE
Description
TRANSISTOR
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.MMBT2222AE.pdf
(4 pages)
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Complementary PNP Type available (MMBT2907AE)
PPLICATION
general purpose amplifier, switching.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1P
MAXIMUM RATINGS T
Symbol
V
V
V
I
P
T
T
C
ELECTRICAL CHARACTERISTICS（Tamb=25℃
J
stg
CBO
CEO
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
B E
MMBT2222AE
1P
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Parameter
A
=25℃ unless otherwise noted
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03A Plastic-Encapsulate Transistors
TRANSISTOR
Symbol
-55to+150
V
V
V
V
V
h
h
h
h
h
CE
BE
(BR)CBO
(BR)CEO
(BR)EBO
I
I
I
C
Value
NF
CBO
EBO
FE(1)
FE(2)
FE(3)
FE(4)
FE(5)
CEX
f
(sat)
(sat)
600
150
150
T
ob
75
40
6
I
I
I
V
V
V
V
V
V
V
V
I
I
I
I
V
f=
V
V
f=1KHz,Rs=1KΩ
C
C
E
C
C
C
C
CB
CE
EB
CE
CE
CE
CE
CE
CE
CB
CB
= 10
= 10mA, I
=10
=500mA,I
=150mA,I
=500mA,I
=150mA,I
Test
100MHz
unless otherwise specified）
= 3V,I
=70 V,I
=60V,V
=10V,I
=10V,I
=10V,I
=10V,I
=10V,I
=20V, I
=10V, I
=10V,I
Units
μ
mW
μ
mA
℃
℃
V
V
V
A,I
A,I
C
C
C
C
C
C
c
conditions
=0
E
E
=0.1mA,
C
BE(off)
= 0.1mA
= 1mA
= 10mA
= 150mA
= 500mA
B
B
B
B
B
E
=0
=
=0
C
=0
= 50mA
=15mA
= 50mA
=15mA
=0
0
= 20mA
, f=
=3V
1M
Hz
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
MIN
100
300
75
40
35
50
75
40
6
BACK
TOP
TYP
B
E
MAX
C
C
400
0.1
0.1
0.1
0.3
1.2
1
2
8
4
B
E
UNIT
MHz
μ
μ
μ
pF
dB
V
V
V
V
V
A
A
A
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MMBT2222AE Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Complementary PNP Type available (MMBT2907AE) PPLICATION general purpose amplifier, switching. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: MAXIMUM RATINGS T =25℃ ...
Page 2
... Parameter Delay time Rise time Storage time Fall time unless otherwise specified） Symbol Test conditions t V =30V, V =-0. BE(off =150mA , I = 15mA =30V, I =150mA =-I =15mA MIN TYP MAX UNIT 225 MMBT2222AE ...
Page 3
...
Page 4
illim ...