BAP50-05,215 NXP Semiconductors, BAP50-05,215 Datasheet - Page 3

• Manufacturer Part Number: BAP50-05,215
• Description: DIODE PIN GP 50V 50MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAP50-05,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
• Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.5 pF at 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 5 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1919-2; 934055505215; BAP50-05 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
1999 May 10
Per diode
V
V
I
C
r
R
j
SYMBOL
R
SYMBOL
D
= 25 C unless otherwise specified.
F
R
General purpose PIN diode
d
th j-s
forward voltage
reverse voltage
reverse current
diode capacitance
diode forward resistance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
I
V
V
V
V
I
I
I
F
R
F
F
F
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 10 A
= 50 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
3
CONDITIONS

50







MIN.
0.95


0.45
0.35
0.3
25
14
3
TYP.
VALUE
220
Product specification
BAP50-05
1.1

100

0.6
0.5
40
25
5
MAX.
UNIT
K/W
V
V
nA
pF
pF
pF



UNIT