BAP50-05W,115 NXP Semiconductors, BAP50-05W,115 Datasheet

DIODE PIN GP 50V 50MA SOT-323

BAP50-05W,115

Manufacturer Part Number
BAP50-05W,115
Description
DIODE PIN GP 50V 50MA SOT-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAP50-05W,115

Package / Case
SC-70-3, SOT-323-3
Diode Type
PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (max)
50V
Current - Max
50mA
Capacitance @ Vr, F
0.5pF @ 5V, 1MHz
Resistance @ If, F
5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
240mW
Configuration
Dual Common Cathode
Reverse Voltage
50 V
Forward Continuous Current
50 mA
Carrier Life
1.05 us
Forward Voltage Drop
1.1 V
Maximum Diode Capacitance
0.5 pF @ 5 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
5 Ohm @ 10 mA
Maximum Series Resistance @ Minimum If
40 Ohm @ 0.5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
240 mW
Forward Current
50mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
SC-70
Mounting
Surface Mount
Typical Carrier Life Time
1.05us
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1920-2
934056537115
BAP50-05W T/R
Product specification
Supersedes data of 2001 Mar 02
DATA SHEET
BAP50-05W
General purpose PIN diode
ok, halfpage
DISCRETE SEMICONDUCTORS
M3D102
2001 Apr 17

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BAP50-05W,115 Summary of contents

Page 1

... DATA SHEET ok, halfpage BAP50-05W General purpose PIN diode Product specification Supersedes data of 2001 Mar 02 DISCRETE SEMICONDUCTORS M3D102 2001 Apr 17 ...

Page 2

... T storage temperature stg T junction temperature j 2001 Apr 17 PINNING PIN handbook, halfpage 1 Top view Marking code: W4-. Fig.1 Simplified outline (SOT323) and symbol. CONDITIONS = 90  Product specification BAP50-05W DESCRIPTION anode anode common cathode MAM382 MIN. MAX. UNIT    240 mW 65  ...

Page 3

... MHz mA 900 MHz mA 1800 MHz mA 2450 MHz F when switched from 100  mA measured 100 mA 100 MHz F PARAMETER 3 Product specification BAP50-05W MIN. TYP. MAX. UNIT  0.95 1.1 V     100 nA   0.45 pF  0.35 0.6 pF  0.3 0.5 pF  ...

Page 4

... Diode capacitance as a function of reverse voltage; typical values (dB) −5 −10 −15 −20 −25 0.5 1 1.5 2 Diode zero biased and inserted in series with a 50  stripline circuit C. T amb  2 Isolation ( the diode in off-state function of frequency; typical values. Product specification BAP50-05W MLD606 (V) MLD608 2 (GHz) ...

Page 5

... OUTLINE VERSION IEC SOT323 2001 Apr scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC- detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION Product specification BAP50-05W SOT323 ISSUE DATE 04-11-04 06-03-16 ...

Page 6

... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 6 Product specification BAP50-05W DEFINITION ...

Page 7

... NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 7 Product specification BAP50-05W ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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