BAP50-04,215 NXP Semiconductors, BAP50-04,215 Datasheet

DIODE PIN GP 50V 50MA SOT-23

BAP50-04,215

Manufacturer Part Number
BAP50-04,215
Description
DIODE PIN GP 50V 50MA SOT-23
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BAP50-04,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (max)
50V
Current - Max
50mA
Capacitance @ Vr, F
0.5pF @ 5V, 1MHz
Resistance @ If, F
5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Dual Series
Reverse Voltage
50 V
Forward Continuous Current
50 mA
Carrier Life
1.05 us
Forward Voltage Drop
1.1 V
Maximum Diode Capacitance
0.5 pF at 5 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
5 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
40 Ohms at 0.5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1917-2
934055687215
BAP50-04 T/R
Product specification
Supersedes data of 1999 May 10
DATA SHEET
BAP50-04
General purpose PIN diode
ok, halfpage
DISCRETE SEMICONDUCTORS
M3D088
1999 Dec 03

Related parts for BAP50-04,215

BAP50-04,215 Summary of contents

Page 1

... DATA SHEET ok, halfpage BAP50-04 General purpose PIN diode Product specification Supersedes data of 1999 May 10 DISCRETE SEMICONDUCTORS M3D088 1999 Dec 03 ...

Page 2

... T storage temperature stg T junction temperature j 1999 Dec 03 PINNING PIN handbook, halfpage 2 3 Marking code: 4Lp. Fig.1 Simplified outline (SOT23) and symbol. CONDITIONS = 90  Product specification BAP50-04 DESCRIPTION anode cathode common connection MAM232 MIN. MAX. UNIT    250 mW 65 C +150  ...

Page 3

... I = 0.5 mA 100 MHz; note mA 100 MHz; note mA 100 MHz; note 1 F when switched from 100 ; measured PARAMETER 3 Product specification BAP50-04 MIN. TYP. MAX. UNIT  0.95 1.1   50   100   0.45  0.35 0.6  0.3 0.5  ...

Page 4

... Diode capacitance as a function of reverse voltage; typical values (dB) −5 −10 −15 −20 −25 0.5 1 1.5 2 Diode zero biased and inserted in series with a 50  stripline circuit C. T amb  2 Fig.5 Isolation ( the diode in off-state function of frequency; typical values. Product specification BAP50-04 MGL927 (V) MGS320 2 (GHz) ...

Page 5

... OUTLINE VERSION IEC SOT23 1999 Dec scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB 5 Product specification detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION BAP50-04 SOT23 ISSUE DATE 04-11-04 06-03-16 ...

Page 6

... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 6 Product specification BAP50-04 DEFINITION ...

Page 7

... NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 7 Product specification BAP50-04 ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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