BAR 63-02W E6327 Infineon Technologies, BAR 63-02W E6327 Datasheet - Page 15

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BAR 63-02W E6327

Manufacturer Part Number
BAR 63-02W E6327
Description
DIODE RF SGL 50V 100MA SCD-80
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAR 63-02W E6327

Package / Case
SCD 80
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.3pF @ 5V, 1MHz
Resistance @ If, F
1 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
SHF
Carrier Life
0.075 us
Forward Voltage Drop
1.2 V
Maximum Diode Capacitance
0.3 pF at 5 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
2 Ohms at 5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR6302WE6327XT
SP000010170
Package Outline
Foot Print
For board assembly information please refer to Infineon website "Packages"
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
1
2
Cathode
marking
Top view
1) Dimension applies to plated terminal
Cathode
marking
Copper
0.6
Package TSLP-2-1
Solder mask
0.05 MAX.
0.76
4
0.4
+0.1
15
Stencil apertures
0.5
0.45
±0.035
0.5
BAS16-02L
Type code
Cathode marking
Laser marking
1)
Bottom view
2
1
0.6
±0.05
2007-04-19
BAR63...

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