BAR 63-02W E6327 Infineon Technologies, BAR 63-02W E6327 Datasheet - Page 4

• Manufacturer Part Number: BAR 63-02W E6327
• Description: DIODE RF SGL 50V 100MA SCD-80
• Manufacturer: Infineon Technologies

Specifications of BAR 63-02W E6327

• Package / Case: SCD 80
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Carrier Life: 0.075 us
• Forward Voltage Drop: 1.2 V
• Maximum Diode Capacitance: 0.3 pF at 5 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 1 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 2 Ohms at 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR6302WE6327XT; SP000010170

Diode capacitance C
f = 1MHz - 1.8GHz
Forward resistance r
f = 100MHz
C
r
f
T
10
10
10
10
0.5
0.4
0.3
0.2
0.1
pF
-1
0
2
1
0
10
0
-2
10
-1
10
T
f
10
=
=
0
(I
(V
F
20
R
)
)
10
1
EHD07139
V
EHD07138
V
mA
F
R
10
30
2
4
Reverse parallel resistance R
f = Parameter
Forward current I
T
F
KOhm
A
10
10
10
10
10
10
10
= Parameter
mA
10
10
10
10
10
-1
-2
-3
3
2
1
0
0.3
-1
3
2
1
0
BAR 63...
0
100 MHz
1 GHz
1.8 GHz
5
0.5
10
F
=
15
(V
0.8
F
)
20
P
2007-04-19
25 ˚C
40
85
BAR63...
= (V
1
˚C
˚C
V
EHD07171
V
V
F
V 1.2
R
R
)
30