BAR 63-02W E6327 Infineon Technologies, BAR 63-02W E6327 Datasheet - Page 2

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BAR 63-02W E6327

Manufacturer Part Number
BAR 63-02W E6327
Description
DIODE RF SGL 50V 100MA SCD-80
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAR 63-02W E6327

Package / Case
SCD 80
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.3pF @ 5V, 1MHz
Resistance @ If, F
1 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
SHF
Carrier Life
0.075 us
Forward Voltage Drop
1.2 V
Maximum Diode Capacitance
0.3 pF at 5 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
2 Ohms at 5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR6302WE6327XT
SP000010170
Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR63-02L, T
BAR63-02V, -02W, BAR63-03W, T
BAR63-04...BAR63-06, T
BAR63-04S, T
BAR63-04W...BAR63-06W, T
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
BAR63-02L
BAR63-02V, BAR63-02W
BAR63-03W
BAR63-04...BAR63-06
BAR63-04S
BAR63-04W...BAR63-06W
Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
Forward voltage
I
1
(BR)
F
For calculation of R
R
= 100 mA
= 35 V
= 5 µA
S
S
thJA
118°C
115°C
please refer to the Technical Information
A
1)
S
= 25°C, unless otherwise specified
55°C
S
A
= 25°C, unless otherwise specified
105°C
S
115°C
2
Symbol
V
I
V
R
Symbol
V
I
P
T
T
T
Symbol
R
(BR)
F
F
j
op
stg
R
tot
thJS
min.
50
-
-
-55 ... 125
-55 ... 150
Value
Value
Values
250
250
250
250
250
100
150
50
140
155
380
180
180
0.95
125
typ.
-
-
max.
1.2
2007-04-19
10
BAR63...
-
Unit
V
mA
mW
°C
Unit
K/W
Unit
V
nA
V

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