MMBD701LT1 ON Semiconductor, MMBD701LT1 Datasheet - Page 22

• Manufacturer Part Number: MMBD701LT1
• Description: DIODE SCHOTTKY 70V 200MW SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBD701LT1

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (max): 70V
• Capacitance @ Vr, F: 1pF @ 20V, 1MHz
• Power Dissipation (max): 200mW
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Capacitance: 1.0 pF (Max.) @ 25°C
• Capacitance, Junction: 0.5 pF
• Current, Forward: 10 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 200 mW
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Voltage, Breakdown: 70 V (Min.) @ 25°C
• Voltage, Forward: 0.42 V
• Voltage, Repetitive Peak Reverse: 70 V
• Voltage, Reverse: 70 V
• Dc: 9822
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Max: -
• Resistance @ If, F: -
• Other names: MMBD701LT1OSCT

Final Product/Process Change Notification #16266
MMSZ5V1T1G
MMSZ5V1T3G
MMSZ5V6T1
MMSZ5V6T1G
MMSZ5V6T3G
MMSZ6V2T1G
MMSZ6V8T1G
MMSZ6V8T3G
MMSZ7V5T1G
MMSZ8V2ET1G
MMSZ8V2T1
MMSZ8V2T1G
MMSZ8V2T1H
MMSZ8V2T3G
MMSZ9V1T1G
MSQA6V1W5T2G
MUN5111DW1T1
MUN5111DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5133DW1T1
MUN5133DW1T1G
MUN5135DW1T1G
MUN5211DW1T1
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1
MUN5213DW1T1G
MUN5214DW1T1
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5235DW1T1G
MUN5237DW1T1G
MUN5311DW1T1
MUN5311DW1T1G
MUN5311DW1T2G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1
MUN5330DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1
MUN5335DW1T1G
MUN5335DW1T2
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 22 of 36