MMBD701LT1 ON Semiconductor, MMBD701LT1 Datasheet - Page 8

• Manufacturer Part Number: MMBD701LT1
• Description: DIODE SCHOTTKY 70V 200MW SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBD701LT1

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (max): 70V
• Capacitance @ Vr, F: 1pF @ 20V, 1MHz
• Power Dissipation (max): 200mW
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Capacitance: 1.0 pF (Max.) @ 25°C
• Capacitance, Junction: 0.5 pF
• Current, Forward: 10 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 200 mW
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Voltage, Breakdown: 70 V (Min.) @ 25°C
• Voltage, Forward: 0.42 V
• Voltage, Repetitive Peak Reverse: 70 V
• Voltage, Reverse: 70 V
• Dc: 9822
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Max: -
• Resistance @ If, F: -
• Other names: MMBD701LT1OSCT

Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
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