BLF6G27-10,118 NXP Semiconductors, BLF6G27-10,118 Datasheet - Page 4

• Manufacturer Part Number: BLF6G27-10,118
• Description: TRANSISTOR PWR LDMOS SOT975B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-10,118

• Transistor Type: LDMOS
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 3.5A
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 2W
• Package / Case: SOT975B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061844118

NXP Semiconductors
BLF6G27-10_BLF6G27-10G
Product data sheet
Fig 1.
EVM
(%)
16
12
8
4
0
10
V
EVM as a function of load power;
typical values
1
DS
= 28 V; I
7.2.1 WiMAX signal description
7.2.2 Graphs
7.2 NXP WiMAX signal
Dq
= 130 mA; f = 2600 MHz.
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; P
Table 8.
Frame contents
Zone 0
Zone 0
Zone 0
1
FCH
data
data
Frame structure
P
L
(W)
2 symbols × 4 subchannels
2 symbols × 26 subchannels
44 symbols × 30 subchannels
All information provided in this document is subject to legal disclaimers.
001aaj351
Rev. 3 — 28 February 2011
10
BLF6G27-10; BLF6G27-10G
Fig 2.
(dB)
G
p
25
23
21
19
17
15
L
10
= P
V
Power gain and drain efficiency as function of
average load power; typical values
1
DS
G
L(nom)
D
p
= 28 V; I
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
+ 3.86 dB.
Dq
WiMAX power LDMOS transistor
= 130 mA; f = 2600 MHz.
1
P
g
L(AV)
/ T
© NXP B.V. 2011. All rights reserved.
b
(W)
= 1 / 8;
001aaj352
Data length
3 bit
692 bit
10000 bit
10
50
40
30
20
10
0
(%)
D
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