MRF5812R2 Microsemi Power Products Group, MRF5812R2 Datasheet - Page 3

• Manufacturer Part Number: MRF5812R2
• Description: TRANS NPN 15V 200MA 8-SOIC
• Manufacturer: Microsemi Power Products Group

Specifications of MRF5812R2

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MRF5812R2MITR; MRF5812R2MITR

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
FUNCTIONAL
G
Symbol
NFmin
(MHz)
|S
MSG
G
U max
1000
2000
3000
f
100
300
500
21
NF
|
2
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
Minimum Noise Figure
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
Power Gain @ Nfmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
|S11|
.579
.593
.598
.592
.615
.691
S11
-141
-173
175
158
115
72
Test Conditions
|S21|
8.93
5.14
2.64
1.55
1.10
24
S21
107
85
74
52
20
-5
|S12|
.024
.045
.066
.132
.310
.518
Min.
13
S12
-
-
-
-
MRF5812G, R1, R2
MRF5812, R1, R2
49
66
69
72
63
41
Value
Typ.
15.5
17.8
2.0
20
15
Max.
|S22|
3.0
.397
.233
.248
.347
.531
.648
-
-
-
Rev A 9/2005
S22
Unit
dB
dB
dB
dB
dB
-103
-110
-119
-141
-172
-76