MRF553G Microsemi Power Products Group, MRF553G Datasheet - Page 2

TRANS NPN 16V 500MA POWERMACRO

MRF553G

Manufacturer Part Number
MRF553G
Description
TRANS NPN 16V 500MA POWERMACRO
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of MRF553G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
16V
Gain
11dB ~ 13dB
Power - Max
3W
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 250mA, 5V
Current - Collector (ic) (max)
500mA
Mounting Type
Surface Mount
Package / Case
Power Macro
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Noise Figure (db Typ @ F)
-
Other names
MRF553GMI
MRF553GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF553G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Part Number:
MRF553GT
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25 C)
STATIC
(off)
DYNAMIC
(on)
Symbol
Symbol
BVCEO
BVCBO
BVEBO
BVCES
ICES
COB
HFE
Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 5 mAdc)
Emitter-Base Breakdown Voltage
(IE = 1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc) Both
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Test Conditions
Test Conditions
Min.
Min.
4.0
16
36
36
30
-
-
Value
Value
Typ.
Typ.
12
-
-
-
-
-
-
MRF553G
MRF553
Max.
Max.
200
20
5
-
-
-
-
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Rev A 9/2005
mA
pF
-

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