BT151X-800C,127 NXP Semiconductors, BT151X-800C,127 Datasheet

BT151X-800C,127

Manufacturer Part Number

BT151X-800C,127

Description

THYRISTOR 800V 12A TO-220F

Manufacturer

NXP Semiconductors

Datasheet

1.BT151X-650C127.pdf (6 pages)

Specifications of BT151X-800C,127

Package / Case

TO-220-3 Full Pack

Scr Type

Standard Recovery

Voltage - Off State

800V

Voltage - Gate Trigger (vgt) (max)

1.5V

Voltage - On State (vtm) (max)

1.75V

Current - On State (it (av)) (max)

7.5A

Current - On State (it (rms)) (max)

12A

Current - Gate Trigger (igt) (max)

15mA

Current - Hold (ih) (max)

20mA

Current - Off State (max)

500µA

Current - Non Rep. Surge 50, 60hz (itsm)

100A, 110A

Operating Temperature

-40°C ~ 125°C

Mounting Type

Through Hole

Current - On State (it (rms) (max)

12A

Breakover Current Ibo Max

110 A

Rated Repetitive Off-state Voltage Vdrm

800 V

Off-state Leakage Current @ Vdrm Idrm

0.5 mA

Forward Voltage Drop

1.75 V

Gate Trigger Voltage (vgt)

1.5 V

Maximum Gate Peak Inverse Voltage

5 V

Gate Trigger Current (igt)

15 mA

Holding Current (ih Max)

20 mA

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

934058484127
BT151X-800C
BT151X-800C

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Philips Semiconductors

GENERAL DESCRIPTION

Passivated thyristors in a full pack,

plastic envelope, intended for use

bidirectional

capability and high thermal cycling

performance. Typical applications

include motor control, industrial

and domestic lighting, heating and

static switching.

PINNING - SOT186A

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 60134).

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/ s.

April 2004

Thyristors

SYMBOL PARAMETER

T(AV)

T(RMS)

TSM

case isolated

stg

DRM

RGM

G(AV)

/dt

applications

, V

RRM

cathode

anode

gate

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak

on-state current

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Junction temperature

t for fusing

blocking

DESCRIPTION

requiring

voltage

high

SYMBOL

RRM

T(AV)

T(RMS)

TSM

QUICK REFERENCE DATA

PIN CONFIGURATION

DRM

CONDITIONS

half sine wave; T

all conduction angles

half sine wave; T

surge

t = 10 ms

t = 8.3 ms

t = 10 ms

over any 20 ms period

/dt = 50 mA/ s

= 20 A; I

on-state

PARAMETER

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak

current

case

= 50 mA;

1 2 3

= 25 ˚C prior to

69 ˚C

BT151X-

MIN.

-40

SYMBOL

MAX.

500C

500

100

7.5

-500C -650C -800C

500

BT151X series C

MAX.

650C

650

100

MAX.

7.5

Product specification

650

100

110

150

125

7.5

0.5

MAX.

800C

800

100

7.5

Rev 1.000

UNIT

A/ s

UNIT

˚C

Related parts for BT151X-800C,127

BT151X-800C,127 Summary of contents

Page 1

... CONDITIONS half sine wave ˚C hs all conduction angles half sine wave ˚C prior to j surge over any 20 ms period 1 Product specification BT151X series C MAX. MAX. MAX. UNIT 500C 650C 800C 500 650 800 V 7.5 7.5 7 100 100 100 A SYMBOL ...

Page 2

... D DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform Gate open circuit R = 100 0 DRM(max / 67 125 ˚C; D DRM(max / / 100 Product specification BT151X series C MIN. TYP. MAX. UNIT - - 2500 MIN. TYP. MAX. UNIT - - 4.5 K 6.5 K K/W MIN. TYP. MAX. UNIT - 1.44 1. 0.6 1 ...

Page 3

... Fig.6. Normalised gate trigger voltage T(RMS Product specification BT151X series C I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... dVD/dt (V/us) 10000 1000 100 10 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT151X series C typ max 0 (V) without heatsink compound with heatsink compound 0.1ms 1ms 10ms 0. versus th j-hs pulse width RGK = 100 Ohms gate open circuit ...

Page 5

... Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 2004 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 5 Product specification BT151X series C 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.000 1.0 (2x) 0.9 0.7 ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT151X series C Rev 1.000 ...

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