BC817DPN,125 NXP Semiconductors, BC817DPN,125 Datasheet - Page 3

• Manufacturer Part Number: BC817DPN,125
• Description: TRANS NPN/PNP 45V 500MA 6-TSOP
• Manufacturer: NXP Semiconductors

Specifications of BC817DPN,125

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 600mW
• Frequency - Transition: 100MHz, 80MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934057320125

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
CHARACTERISTICS
T
Notes
1. Pulse test: t
2. V
2002 Nov 22
R
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
I
h
V
V
NPN transistor
C
f
PNP transistor
C
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
T
FE
CEsat
BE
NPN/PNP general purpose transistor
th j-a
c
c
= 25 °C unless otherwise specified.
BE
decreases by approximately −2 mV/K with increasing temperature.
thermal resistance from junction to
ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter voltage
collector capacitance
transition frequency
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
note 1
V
V
V
V
V
V
notes 1 and 2
V
V
f = 100 MHz
V
V
f = 100 MHz
C
CB
CB
EB
CE
CE
CE
CB
CE
CB
CE
= 500 mA; I
= 5 V; I
= 20 V; I
= 20 V; I
= 1 V; I
= 1 V; I
= 1 V; I
= 10 V; I
= 5 V; I
= −10 V; I
= −5 V; I
3
CONDITIONS
C
C
C
C
C
E
E
E
C
= 0
= 100 mA; note 1
= 500 mA; note 1
= 10 mA;
= 500 mA;
B
E
CONDITIONS
= 0
= 0; T
= I
= −10 mA;
= 50 mA; note 1
= I
e
e
= 0; f = 1 MHz
= 0; f = 1 MHz
j
= 150 °C
−
−
−
160
40
−
−
−
100
−
80
MIN.
−
−
−
−
−
−
−
5
−
9
−
TYP.
VALUE
208
BC817DPN
Product data sheet
100
5
100
400
−
700
1.2
−
−
−
−
MAX.
2
UNIT
.
K/W
nA
μA
nA
mV
V
pF
MHz
pF
MHz
UNIT