BC817DPN,125 NXP Semiconductors, BC817DPN,125 Datasheet - Page 4

• Manufacturer Part Number: BC817DPN,125
• Description: TRANS NPN/PNP 45V 500MA 6-TSOP
• Manufacturer: NXP Semiconductors

Specifications of BC817DPN,125

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 600mW
• Frequency - Transition: 100MHz, 80MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934057320125

NXP Semiconductors
2002 Nov 22
handbook, halfpage
NPN/PNP general purpose transistor
TR1 (NPN) V
(1) T
(2) T
(3) T
Fig.2
h FE
500
400
300
200
100
amb
amb
amb
0
10
−1
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
CE
= 1 V.
1
(1)
(2)
(3)
10
10
2
I C (mA)
MBL747
10
3
4
handbook, halfpage
TR1 (NPN)
(1) I
(2) I
(3) I
(4) I
Fig.3
(mA)
1000
I C
800
600
400
200
B
B
B
B
0
= 15 mA.
= 13.5 mA.
= 12 mA.
= 10.5 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
2
(1) (2) (3) (4) (5)
(5) I
(6) I
(7) I
(8) I
B
B
B
B
4
= 9 mA.
= 7.5 mA.
= 6 mA.
= 4.5 mA.
6
(9) I
(10) I
BC817DPN
(10)
(6)
(7)
(8)
(9)
Product data sheet
8
B
B
V CE (V)
= 3 mA.
= 1.5 mA.
MBL748
10