BC847BDW1T3G ON Semiconductor, BC847BDW1T3G Datasheet

TRANS NPN DUAL 45V 100MA SOT-363

BC847BDW1T3G

Manufacturer Part Number
BC847BDW1T3G
Description
TRANS NPN DUAL 45V 100MA SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC847BDW1T3G

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BC847BDW1T3G
BC847BDW1T3GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC847BDW1T3G
Manufacturer:
ON Semiconductor
Quantity:
2 750
Part Number:
BC847BDW1T3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BC847BDW1T3G
Manufacturer:
ON/安森美
Quantity:
20 000
BC846BDW1T1G,
BC847BDW1T1G,
BC848CDW1T1G
Dual General Purpose
Transistors
NPN Duals
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current −
Continuous
Total Device Dissipation
Thermal Resistance,
Junction and Storage
These transistors are designed for general purpose amplifier
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Per Device
FR−5 Board (Note 1)
T
Derate Above 25°C
Junction to Ambient
Temperature Range
A
= 25°C
Characteristic
Rating
Symbol
Symbol
T
V
V
V
R
J
CEO
CBO
EBO
I
P
, T
C
qJA
D
stg
BC846
100
6.0
65
80
−55 to +150
BC847
Max
380
250
328
100
3.0
6.0
45
50
BC848
100
5.0
30
30
1
mW/°C
°C/W
Unit
mAdc
mW
Unit
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
CASE 419B
(Note: Microdot may be in either location)
SOT−363
STYLE 1
6
Q
ORDERING INFORMATION
(3)
(4)
1
1
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = Pb−Free Package
http://onsemi.com
(5)
Publication Order Number:
(2)
MARKING
DIAGRAM
BC846BDW1T1/D
1x MG
G
(1)
(6)
Q
2

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BC847BDW1T3G Summary of contents

Page 1

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage ( mA Collector −Base Breakdown Voltage ( mA) C Emitter−Base Breakdown Voltage ...

Page 3

TYPICAL CHARACTERISTICS − BC846BDW1T1G 600 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain 0.20 0.15 0.10 25°C ...

Page 4

TYPICAL CHARACTERISTICS − BC846BDW1T1G 1. 1.10 1.00 0.90 −55°C 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.20 0.0001 0.001 I , COLLECTOR CURRENT (A) C Figure BE(on ...

Page 5

TYPICAL CHARACTERISTICS − BC847BDW1T1G 600 150°C 500 400 25°C 300 −55°C 200 100 0 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 12. DC Current Gain 0.20 0.15 0.10 ...

Page 6

TYPICAL CHARACTERISTICS − BC847BDW1T1G 1. 1.10 1.00 0.90 −55°C 0.80 0.70 25°C 0.60 0.50 150°C 0.40 0.30 0.20 0.0001 0.001 I , COLLECTOR CURRENT (A) C Figure 18 BE(on ...

Page 7

TYPICAL CHARACTERISTICS − BC848CDW1T1G 1000 150°C 900 800 700 600 25°C 500 400 −55°C 300 200 100 0 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 23. DC Current Gain ...

Page 8

TYPICAL CHARACTERISTICS − BC848CDW1T1G 1 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 0.4 150°C 0.3 0.2 0.1 0.0 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 29 BE(on ...

Page 9

... COLLECTOR-EMITTER VOLTAGE (V) CE Figure 35. Active Region Safe Operating Area ORDERING INFORMATION Device BC846BDW1T1G BC847BDW1T1G BC847BDW1T3G BC847CDW1T1G BC848CDW1T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. P (pk) DUTY CYCLE ...

Page 10

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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