BC847BDW1T3G ON Semiconductor, BC847BDW1T3G Datasheet - Page 5

• Manufacturer Part Number: BC847BDW1T3G
• Description: TRANS NPN DUAL 45V 100MA SOT-363
• Manufacturer: ON Semiconductor

Specifications of BC847BDW1T3G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BC847BDW1T3G; BC847BDW1T3GOSTR

0.25
0.20
0.15
0.10
0.05
0.00
1.20
1.00
0.80
0.60
0.40
0.20
0.00
100
600
500
400
300
200
0.0001
0.0001
0
0.0001
I
C
I
/I
C
Figure 12. DC Current Gain at V
B
/I
B
= 10
= 10
Figure 16. V
150°C
−55°C
25°C
I
I
I
0.001
Figure 14. V
C
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.001
0.001
25°C
−55°C
150°C
25°C
BE(sat)
CE
0.01
TYPICAL CHARACTERISTICS − BC847BDW1T1G
150°C
at I
at I
C
−55°C
/I
C
0.01
0.01
B
/I
B
= 10
= 10
0.1
CE
V
= 5 V
CE
http://onsemi.com
= 5 V
0.1
0.1
1
5
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.20
1.00
0.80
0.60
0.40
0.20
0.00
600
500
400
300
200
100
0.0001
0
0.0001
0.0001
I
C
I
C
Figure 13. DC Current Gain at V
/I
/I
B
B
= 20
= 20
Figure 17. V
I
I
I
0.001
Figure 15. V
C
C
C
150°C
−55°C
25°C
150°C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
−55°C
25°C
0.001
0.001
25°C
BE(sat)
CE
0.01
at I
at I
C
/I
150°C
C
0.01
0.01
B
/I
−55°C
= 20
B
= 20
CE
0.1
V
= 10 V
CE
= 10 V
0.1
0.1
1