BC847

Manufacturer Part NumberBC847
ManufacturerFairchild Semiconductor
BC847 datasheet
 
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Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
P
Collector Power Dissipation
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
I
Collector Cut-off Current
CBO
h
DC Current Gain
FE
V
(sat)
Collector-Emitter Saturation Voltage
CE
V
(sat)
Collector-Base Saturation Voltage
BE
V
(on)
Base-Emitter On Voltage
BE
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
C
Input Capacitance
ib
NF
Noise Figure
: BC846/847/848
: BC849/850
: BC849
: BC850
©2002 Fairchild Semiconductor Corporation
BC846/847/848/849/850
T
=25 C unless otherwise noted
a
Parameter
: BC846
: BC847/850
: BC848/849
: BC846
: BC847/850
: BC848/849
: BC846/847
: BC848/849/850
T
=25 C unless otherwise noted
a
Test Condition
V
=30V, I
=0
CB
E
V
=5V, I
=2mA
CE
C
I
=10mA, I
=0.5mA
C
B
I
=100mA, I
=5mA
C
B
I
=10mA, I
=0.5mA
C
B
I
=100mA, I
=5mA
C
B
V
=5V, I
=2mA
CE
C
V
=5V, I
=10mA
CE
C
V
=5V, I
=10mA, f=100MHz
CE
C
V
=10V, I
=0, f=1MHz
CB
E
V
=0.5V, I
=0, f=1MHz
EB
C
V
=5V, I
=200 A
CE
C
f=1KHz, R
=2K
G
V
=5V, I
=200 A
CE
C
R
=2K , f=30~15000Hz
G
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
Units
80
V
50
V
30
V
65
V
45
V
30
V
6
V
5
V
100
mA
310
mW
150
C
-65 ~ 150
C
Min.
Typ.
Max.
Units
15
nA
110
800
90
250
mV
200
600
mV
700
mV
900
mV
580
660
700
mV
720
mV
300
MHz
3.5
6
pF
9
pF
2
10
dB
1.2
4
dB
1.4
4
dB
1.4
3
dB
Rev. A2, August 2002

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