LCMXO1200C-3FTN256I LATTICE SEMICONDUCTOR, LCMXO1200C-3FTN256I Datasheet - Page 29

• Manufacturer Part Number: LCMXO1200C-3FTN256I
• Description: CPLD MachXO Family 600 Macro Cells 1.8V/2.5V/3.3V 256-Pin FTBGA Tray
• Manufacturer: LATTICE SEMICONDUCTOR

Specifications of LCMXO1200C-3FTN256I

• Package: 256FTBGA
• Family Name: MachXO
• Number Of Macro Cells: 600
• Maximum Propagation Delay Time: 5.1 ns
• Number Of User I/os: 211
• Typical Operating Supply Voltage: 1.8|2.5|3.3 V
• Ram Bits: 9420.8
• Memory Type: SRAM
• Operating Temperature: -40 to 100 °C

Lattice Semiconductor
Supply Current (Sleep Mode)
Supply Current (Standby)
1. For further information on supply current, please see details of additional technical documentation at the end of this data sheet.
2. Assumes all outputs are tristated, all inputs are configured as LVCMOS and held at V
3. Frequency = 0MHz.
4. User pattern = blank.
5. T
6. Per Bank. V
I
I
I
1. Assumes all inputs are configured as LVCMOS and held at the VCCIO or GND.
2. Frequency = 0MHz.
3. T
4. Per Bank.
I
I
I
CC
CCAUX
CCIO
CC
CCAUX
CCIO
J
A
Symbol
= 25
= 25°C, power supplies at nominal voltage.
Symbol
o
C, power supplies at nominal voltage.
CCIO
= 2.5V. Does not include pull-up/pull-down.
Core Power Supply
Auxiliary Power Supply
Bank Power Supply
Core Power Supply
Auxiliary Power Supply
V
Bank Power Supply
CCAUX
Parameter
= 3.3V
Parameter
Over Recommended Operating Conditions
4
1, 2, 3, 4
6
1, 2
LCMXO256C
LCMXO640C
LCMXO1200C
LCMXO2280C
LCMXO256C
LCMXO640C
LCMXO1200C
LCMXO2280C
All LCMXO ‘C’ Devices
LCMXO256C
LCMXO640C
LCMXO1200C
LCMXO2280C
LCMXO256E
LCMXO640E
LCMXO1200E
LCMXO2280E
LCMXO256E/C
LCMXO640E/C
LCMXO1200E/C
LCMXO2280E/C
All devices
3-3
Device
Device
CCIO
DC and Switching Characteristics
or GND.
MachXO Family Data Sheet
Typ.
12
12
12
12
1
1
1
1
2
3
Typ.
14
20
10
12
12
13
7
9
4
6
5
7
2
5
Max.
25
25
25
25
15
25
45
85
30
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA