2SD1782KT146R Rohm Semiconductor, 2SD1782KT146R Datasheet - Page 2

• Manufacturer Part Number: 2SD1782KT146R
• Description: TRANS NPN 80V 0.5A SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of 2SD1782KT146R

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 100mA, 3V
• Power - Max: 200mW
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Npn: DRIVER
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• No. Of: RoHS Compliant
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SD1782KT146R; 2SD1782KT146RTR

Transistors
Type
2SD1782K
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base breakdown voltage
Electrical characteristics (Ta=25°C)
Packaging specifications and h
Electrical characteristic curves
Fig.1
500
200
100
50
20
10
5
2
1
0
BASE TO EMITTER VOLTAGE : V
0.2
Grounded emitter propagation
characteristics
Ta=100°C
−25°C
25°C
0.4
Parameter
h
QR
FE
0.6
Package
Code
Basic ordering
unit (pieces)
0.8
1.0
V
CE
1.2
= 3V
BE
(V)
1.4
FE
Symbol
BV
BV
BV
V
Taping
Cob
I
I
T146
3000
h
CE(sat)
CBO
EBO
f
0.5
0.4
0.3
0.2
0.1
FE
CBO
CEO
EBO
T
COLLECTOR TO EMITTER VOLTAGE : V
0
0
Fig.2
Ta=25°C
2.0mA
2.5mA
Min.
120
0.4
3.0mA
80
80
5
−
−
−
−
−
Grounded emitter output
characteristics
3.5mA
4.0mA
0.8
Typ.
4.5mA
120
0.2
7.5
−
−
−
−
−
−
1.2
h
Max.
FE
390
0.5
0.5
0.5
5.0mA
−
−
−
−
−
Item
h
values are classified as follows :
FE
1.6
I
B
1.5mA
1.0mA
0.5mA
=0mA
MHz
Unit
µ A
µ A
pF
CE
V
V
V
V
−
2.0
(V)
120 to 270
Q
I
I
I
V
V
I
V
V
V
C
C
E
C
CE
=50 µ A
CB
EB
CE
CB
=50 µ A
=2mA
/I
1000
B
500
200
100
=50V
=4V
=3V, I
=10V, I
=10V, I
50
20
10
=500mA/50mA
1
Fig.3
180 to 390
2
C
COLLECTOR CURRENT : I
E
=100mA
E
Conditions
= −50mA, f=100MHz
=0A, f=1MHz
R
DC current gain vs. collector
current
5
Ta=100°C
10 20
−25°C
25°C
Rev.A
2SD1782K
50 100 200 5001000
C
V
(mA)
CE
= 3V
2/3