2SD1782KT146R Rohm Semiconductor, 2SD1782KT146R Datasheet - Page 3

TRANS NPN 80V 0.5A SOT-346

2SD1782KT146R

Manufacturer Part Number
2SD1782KT146R
Description
TRANS NPN 80V 0.5A SOT-346
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SD1782KT146R

Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 3V
Power - Max
200mW
Frequency - Transition
120MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Npn
DRIVER
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
200mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-346
No. Of
RoHS Compliant
Transistor Polarity
NPN
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SD1782KT146R
2SD1782KT146RTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1782KT146R
Manufacturer:
ROHM
Quantity:
4 155
Part Number:
2SD1782KT146R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Fig.7
Fig.4
1000
1000
500
200
100
500
200
100
50
20
10
50
20
10
1
1
Collector-emitter saturation voltage
vs. collector current (
Collector-emitter saturation voltage
vs. collector current ( )
2
2
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
5
5
I
C
Ta=100°C
/I
B
10 20
10 20
=50
−25°C
20
10
25°C
50 100 200
50 100 200 5001000
)
C
C
Ta=25°C
(mA)
(mA)
l
C
/l
B
=50
5001000
Fig.5
1000
1000
500
200
100
Fig.8
500
200
100
50
20
10
50
20
10
−1
1
−2
Collector-emitter saturation voltage
vs. collector current (
2
COLLECTOR CURRENT : I
Gain bandwidth product vs.
emitter current
EMITTER CURRENT : I
−5 −10 −20 −50 −100−200 −500−1000
5
10 20
Ta=100°C
−25°C
25°C
50 100 200 5001000
E
)
(mA)
C
V
Ta = 25°C
(mA)
l
CE
C
/l
= 10V
B
=10
Fig.9
Fig.6
1000
1000
500
200
100
500
200
100
50
20
10
5
2
1
0.1 0.2
50
20
10
COLLECTOR TO BASE VOLTAGE : V
1
EMITTER TO BASE VOLTAGE : V
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Collector-emitter saturation voltage
vs. collector current (
2
COLLECTOR CURRENT : I
0.5 1
5
Ta=100°C
10 20
Cob
Cib
−25°C
Rev.A
2
25°C
2SD1782K
5
50 100 200 500 1000
10 20
)
Ta = 25°C
C
f = 1MHz
I
I
E
C
(mA)
= 0A
l
= 0A
C
/l
EB
B
50 100
=20
CB
(V)
(V)
3/3

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