2SB1326TV2R Rohm Semiconductor, 2SB1326TV2R Datasheet - Page 2

• Manufacturer Part Number: 2SB1326TV2R
• Description: TRANS PNP 20V 5A ATV
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1326TV2R

• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 120MHz
• Mounting Type: Through Hole
• Package / Case: ATV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2SB1326TV2R; 2SB1326TV2RTB

Transistors
! ! ! ! Absolute maximum ratings (Ta=25°C)
! ! ! ! Electrical characteristics (Ta=25°C)
! ! ! ! Packaging specifications and h
h
∗ Measured using pulse current.
∗ 1 Single pulse, Pw=10ms
∗ 2 When mounted on a 40 × 40 × 0.7 mm ceramic board.
∗ 3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm
Type
2SB1386
2SB1412
2SB1326
FE
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
values are classified as follows :
Item
h
FE
Parameter
Parameter
h
PQR
PQR
QR
82 ~ 180
FE
P
2SB1386
2SB1412
2SB1326
2SB1386,2SB1412
2SB1326
Package
Code
Basic ordering
unit (pieces)
120 ~ 270
Q
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
FE
Symbol
V
BV
BV
BV
180 ~ 390
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
T
CBO
CEO
EBO
T100
1000
R
−
−
−55 ~ +150
Min.
−30
−20
120
82
−6
Limits
−
−
−
−
−
−30
−20
−10
150
0.5
−6
−5
10
2
1
1
Taping
2500
TL
−
−
Typ.
120
60
−
−
−
−
−
−
−
−
2500
Max.
TV2
W(T
−0.5
−0.5
−1.0
390
390
−
−
2
−
−
−
−
−
A(Pulse)
or larger.
A(DC)
Unit
C
2SB1386 / 2SB1412 / 2SB1326
°C
°C
W
W
W
W
= 25 °C)
V
V
V
MHz
Unit
µA
µA
pF
V
V
V
V
−
−
∗ 1
∗ 2
∗ 3
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
=−50µA
=−50µA
=−1mA
/I
B
=−5V
=−20V
=−2V, I
=−6V, I
=−20V, I
=−4A/−0.1A
C
E
Conditions
=50mA, f=30MHz
=−0.5A
E
=0A, f=1MHz
∗
∗
∗