2SB1326TV2R Rohm Semiconductor, 2SB1326TV2R Datasheet - Page 4

• Manufacturer Part Number: 2SB1326TV2R
• Description: TRANS PNP 20V 5A ATV
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1326TV2R

• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 120MHz
• Mounting Type: Through Hole
• Package / Case: ATV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2SB1326TV2R; 2SB1326TV2RTB

Transistors
Fig.10 Collector-emitter saturation
-0.05
-0.02
-0.01
1000
-0.5
-0.2
-0.1
500
200
100
50
20
10
-5
-2
-1
-0.1
-2m -5m
Fig.13 Emitter input capacitance
EMITTER TO BASE VOLTAGE : V
l
C
/l
voltage vs. collector current (V)
B
-0.2
= 50
COLLECTOR CURRENT : I
-0.01 -0.02
vs. emitter-base voltage
-0.5
-0.05
-0.1 -0.2 -0.5
-1
-2
Ta=100 °C
-1 -2
−25 °C
25 °C
Ta=25°C
C
f=1MHz
I
C
(A)
=0A
-5
EB
-5 -10
(V)
-10
1 000
500
200
100
500m
200m
100m
50
20
10
Fig.11 Gain bandwidth product
50m
20m
10m
COLLECTOR TO EMITTER VOLTAGE : −V
5
2
1
100
50
20
10
1
5
2
1
0.2 0.5 1
2
Fig.14 Safe operation area
EMITTER CURRENT : I
5
vs. emitter current
10
2
(2SB1412)
20
5 10 20 50 100
50 100 200 500
2SB1386 / 2SB1412 / 2SB1326
Ta=25°C
∗Single
E
nonrepetitive
pulse
(mA)
Ta=25°C
V
CE
=− 6V
200
500
1000
CE
(V)
1000
Fig.12 Collector output capacitance
500
200
100
50
20
10
-0.1 -0.2
COLLECTOR TO BASE VOLTAGE : V
vs. collector-base voltage
-0.5 -1
-2
-5 -10 -20
Ta=25°C
f=1MHz
I
E
=0A
CB
(V)
-50