TIP31G ON Semiconductor, TIP31G Datasheet - Page 3

• Manufacturer Part Number: TIP31G
• Description: TRANS NPN 3A 40V HI PWR TO220AB
• Manufacturer: ON Semiconductor

Specifications of TIP31G

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 300µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 25
• Gain Bandwidth Product Ft: 3 MHz
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP31GOS

V
APPROX
APPROX
R
EB(off)
+11 V
B
+11 V
V
and R
V
in
in
TURN−OFF PULSE
Figure 2. Switching Time Equivalent Circuit
TURN−ON PULSE
0
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS.
t
t
2
1
t
3
100 < t
DUTY CYCLE ≈ 2.0%
APPROX − 9.0 V
V
t
t
V
1
CC
3
T
40
30
20
10
in
C
≤ 7.0 ns
< 15 ns
0
2
< 500 ms
T
4.0
3.0
2.0
1.0
A
0
C
0
jd
R
B
<< C
R
20
C
eb
−4.0 V
40
Figure 1. Power Derating
http://onsemi.com
T, TEMPERATURE (°C)
60
SCOPE
T
T
C
A
3
80
0.07
0.05
0.03
0.02
2.0
1.0
0.7
0.5
0.3
0.1
0.03
100
0.05
120
t
r
I
C
@ V
140
, COLLECTOR CURRENT (AMP)
0.1
Figure 3. Turn−On Time
t
CC
r
@ V
= 10 V
160
CC
= 30 V
0.3
t
0.5
d
@ V
EB(off)
1.0
I
T
C
= 2.0 V
J
/I
= 25°C
B
= 10
3.0