TIP31G ON Semiconductor, TIP31G Datasheet - Page 3
TIP31G
Manufacturer Part Number
TIP31G
Description
TRANS NPN 3A 40V HI PWR TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.TIP31AG.pdf
(6 pages)
Specifications of TIP31G
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
300µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
2W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
25
Gain Bandwidth Product Ft
3 MHz
Maximum Operating Frequency
3 MHz
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TIP31GOS
V
APPROX
APPROX
R
EB(off)
+11 V
B
+11 V
V
and R
V
in
in
TURN−OFF PULSE
Figure 2. Switching Time Equivalent Circuit
TURN−ON PULSE
0
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS.
t
t
2
1
t
3
100 < t
DUTY CYCLE ≈ 2.0%
APPROX − 9.0 V
V
t
t
V
1
CC
3
T
40
30
20
10
in
C
≤ 7.0 ns
< 15 ns
0
2
< 500 ms
T
4.0
3.0
2.0
1.0
A
0
C
0
jd
R
B
<< C
R
20
C
eb
−4.0 V
40
Figure 1. Power Derating
http://onsemi.com
T, TEMPERATURE (°C)
60
SCOPE
T
T
C
A
3
80
0.07
0.05
0.03
0.02
2.0
1.0
0.7
0.5
0.3
0.1
0.03
100
0.05
120
t
r
I
C
@ V
140
, COLLECTOR CURRENT (AMP)
0.1
Figure 3. Turn−On Time
t
CC
r
@ V
= 10 V
160
CC
= 30 V
0.3
t
0.5
d
@ V
EB(off)
1.0
I
T
C
= 2.0 V
J
/I
= 25°C
B
= 10
3.0