BC 856B E6327 Infineon Technologies, BC 856B E6327 Datasheet - Page 3

• Manufacturer Part Number: BC 856B E6327
• Description: TRANSISTOR PNP AF 65V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BC 856B E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 250 at 10 uA at 5 V
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC 856B E6327; BC856BE6327INTR; BC856BE6327XT; SP000012935

Maximum Ratings
Parameter
Collector-emitter voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Collector-base voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Emitter-base voltage
Collector current
Peak collector current, t
Total power dissipation
T
T
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC856-BC860
BC857BF-BC858BF
BC857BL3, BC858BL3
BC856W-BC860W
For calculation of R
S
S
S
S
≤ 71 °C, BC856-BC860
≤ 128 °C, BC857BF-BC858BF
≤ 135 °C, BC857BL3, BC860BL3
≤ 124 °C, BC856W-BC860W
thJA
please refer to Application Note Thermal Resistance
p
≤ 10 ms
1)
3
Symbol
V
V
V
I
I
P
T
T
Symbol
R
C
CM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
Value
BC856...-BC860...
Value
≤ 240
≤ 105
≤ 90
≤ 60
330
250
250
250
100
200
150
65
45
30
80
50
30
5
2008-04-29
Unit
V
mA
mW
°C
Unit
K/W