NSS1C200MZ4T1G ON Semiconductor, NSS1C200MZ4T1G Datasheet - Page 3

• Manufacturer Part Number: NSS1C200MZ4T1G
• Description: TRANS PNP 100V 2A SOT223
• Manufacturer: ON Semiconductor

Specifications of NSS1C200MZ4T1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 220mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NSS1C200MZ4T1GOSTR

500
400
300
200
100
0.01
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0
1
0.001
0.001
0.001
Figure 4. Collector−Emitter Saturation Voltage
−55°C
150°C
25°C
−55°C
25°C
150°C
I
I
Figure 6. Base−Emitter Saturation Voltage
C
C
/I
/I
B
B
= 10
= 10
0.01
I
I
C
Figure 2. DC Current Gain
C
0.01
I
0.01
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
25°C
0.1
0.1
0.1
150°C
−55°C
TYPICAL CHARACTERISTICS
1
1
1
V
CE
= 2 V
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10
10
10
3
0.01
500
400
300
200
100
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0
1
0.001
0.001
0.001
150°C
−55°C
Figure 5. Collector−Emitter Saturation Voltage
25°C
−55°C
25°C
150°C
I
C
I
C
Figure 7. Base−Emitter Saturation Voltage
/I
/I
B
B
= 20
= 50
I
C
0.01
0.01
I
0.01
I
C
Figure 3. DC Current Gain
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.1
0.1
0.1
−55°C
25°C
150°C
1
1
1
V
CE
= 4 V
10
10
10