NSS1C200MZ4T1G ON Semiconductor, NSS1C200MZ4T1G Datasheet - Page 4

• Manufacturer Part Number: NSS1C200MZ4T1G
• Description: TRANS PNP 100V 2A SOT223
• Manufacturer: ON Semiconductor

Specifications of NSS1C200MZ4T1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 220mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NSS1C200MZ4T1GOSTR

400
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
120
100
80
60
40
20
0
0
0.001
0
150°C
0.001
−55°C
25°C
V
Figure 12. Current−Gain Bandwidth Product
CE
T
f
V
test
J
CE
= 2 V
1
= 25°C
= 1 MHz
= 10 V
Figure 8. Base−Emitter Voltage
V
Figure 10. Input Capacitance
0.01
BE
I
I
C
C
2
, EMITTER BASE VOLTAGE (V)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.01
3
0.1
4
5
0.1
T
f
TYPICAL CHARACTERISTICS
test
J
1
6
= 25°C
= 1 MHz
http://onsemi.com
7
10
8
1
4
0.01
0.01
120
100
0.1
0.1
80
60
40
20
10
1
0
1
0.0001
0
1
T
10
J
I
C
Figure 9. Collector Saturation Region
V
= 25°C
CE
= 0.1 A
V
CB
20
Figure 13. Safe Operating Area
Figure 11. Output Capacitance
, COLLECTOR EMITTER VOLTAGE (V)
0.001
, COLLECTOR BASE VOLTAGE (V)
30
I
B
, BASE CURRENT (A)
0.5 A
40
100 mS
1.0 A
0.01
50
10
10 mS
60
2.0 A
70
0.1
T
f
test
0.5 mS
J
80
T
= 25°C
3.0 A
J
= 1 MHz
= 25°C
1 mS
90 100
100
1